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Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells
Type:
Journal
Info:
J. Mater. Chem. C, 2019, 7, 12532-12543
Date:
2019-09-17
Author Information
| Name | Institution |
|---|---|
| Dibyashree Koushik | Eindhoven University of Technology |
| Marko Jošt | Helmholtz-Zentrum Berlin für Materialien und Energie GmbH |
| Algirdas Dučinskas | Eindhoven University of Technology |
| Claire Burgess | Eindhoven University of Technology |
| Valerio Zardetto | Solliance Solar Research |
| Christ Weijtens | Eindhoven University of Technology |
| Marcel A. Verheijen | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
| Steve Albrecht | Helmholtz-Zentrum Berlin für Materialien und Energie GmbH |
| Mariadriana Creatore | Eindhoven University of Technology |
Films
Plasma NiOx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Uniformity
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Characteristic: Wetting Angle
Analysis: Contact Angle Measurement
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Valence Band Maximum
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Characteristic: Ionization Energy
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Characteristic: Carrier Concentration
Analysis: EIS, Electrochemical Impedance Spectroscopy
Characteristic: Open Circuit Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Short Circuit Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Fill Factor
Analysis: I-V, Current-Voltage Measurements
Characteristic: Power Conversion Efficiency
Analysis: I-V, Current-Voltage Measurements
Characteristic: EQE, External Quantum Efficiency
Analysis: Custom
Substrates
| Silicon |
Notes
| 1598 |