Publication Information

Title: Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition

Type: Conference Proceedings

Info: 2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)

Date: 2016-04-01

DOI: http://dx.doi.org/10.1109/ELNANO.2016.7493030

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Marmara University

Marmara University

Films

Deposition Temperature Range = 200-450C

1115-99-7

7727-37-9

1333-74-0

Deposition Temperature Range = 200-450C

1445-79-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Park Systems, XE-100

Thickness

Ellipsometry

J.A. Woollam VASE

Refractive Index

Ellipsometry

J.A. Woollam VASE

Extinction Coefficient

Ellipsometry

J.A. Woollam VASE

Substrates

Silicon

Quartz

Keywords

Precursor Comparison

Notes

Meaglow plasma.

793

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