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A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 14 (7) H271-H273 (2011)
Date:
2011-03-18
Author Information
| Name | Institution |
|---|---|
| A. Cacciato | IMEC |
| L. Breuil | IMEC |
| H. Dekker | IMEC |
| M. Zahid | IMEC |
| G. S. Kar | IMEC |
| J.L. Everaert | IMEC |
| G. Schoofs | IMEC |
| X. Shi | IMEC |
| G. Van den bosch | IMEC |
| M. Jurczak | IMEC |
| I. Debusschere | IMEC |
| J. Van Houdt | IMEC |
| Andrew Cockburn | Applied Materials |
| Lucien Date | Applied Materials |
| Li-Qun Xa | Applied Materials |
| Maggie Le | Applied Materials |
| Won Lee | Applied Materials |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: -
Characteristic: Refractive Index
Analysis: -
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Flat Band Voltage Shift
Analysis: Non-contact Corona C-V
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: Non-contact Corona C-V
Characteristic: Thickness
Analysis: Non-contact Corona C-V
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Silicon |
Notes
| 1362 |