Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Type:
Journal
Info:
Nanomaterials 2021, 11, 978
Date:
2021-04-07

Author Information

Name Institution
Ming-Jie ZhaoXiamen University of Technology
Zhi-Xuan ZhangXiamen University of Technology
Chia-Hsun HsuXiamen University of Technology
Xiao-Ying ZhangXiamen University of Technology
Wan-Yu WuDa-Yeh University
Shui-Yang LienXiamen University of Technology
Wen-Zhang ZhuXiamen University of Technology

Films

Plasma In2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Transmittance
Analysis: Optical Transmission

Characteristic: Reflectance Spectra
Analysis: Optical Reflectivity

Characteristic: Optical Bandgap
Analysis: Optical Transmission

Characteristic: Carrier Concentration
Analysis: Hall Measurements

Characteristic: Mobility
Analysis: Hall Measurements

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements

Substrates

Silicon
Glass

Notes

1658