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Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
Type:
Journal
Info:
Journal of The Electrochemical Society, 156 (7) P122-P126 (2009)
Date:
2009-05-19
Author Information
| Name | Institution |
|---|---|
| Jan Musschoot | Ghent University |
| Davy Deduytsche | Ghent University |
| Hilde Poelman | Ghent University |
| Jo Haemers | Ghent University |
| Ronald L. Van Meirhaeghe | Ghent University |
| Sven Van den Berghe | SCK-CEN |
| Christophe Detavernier | Ghent University |
Films
Film/Plasma Properties
Characteristic: OES
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Substrates
| SiO2 |
Notes
| Above 200C, VTIP thermally decomposes and CVD is obtained. |
| Thermal and PEALD V2O5 comparison with O2 and H2O co-reactants. |
| 299 |