Publication Information

Title: High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness

Type: Journal

Info: APPLIED PHYSICS LETTERS 105, 222103 (2014)

Date: 2014-11-18

DOI: http://dx.doi.org/10.1063/1.4903068

Author Information

Name

Institution

The Pennsylvania State University

Kurt J. Lesker Company

University of Texas at Dallas

University of Texas at Dallas

U.S. Naval Research Laboratory

The Pennsylvania State University

The Pennsylvania State University

Films

Deposition Temperature = 250C

19962-11-9

7732-18-5

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Images

TEM, Transmission Electron Microscope

FEI Titan 3

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Interfacial Layer

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Unknown

Substrates

GaSb

Keywords

Capacitors

Notes

GaSb substrates cleaned with acetone and IPA. Then HCl was used for native oxide removal.

Prior to HfO2 deposition, 10 cylces of TMA followed by 10 cycles of water was used to ensure hydroxylation of surface.

In situ forming gas anneal at 350C with 40sccm H2 and 110 sccm Ar.

Prior to thermal HfO2 deposition, the substrate surface was prepared with H2 plasma.

152

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