| 1 | Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3 |
| 2 | Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties |
| 3 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
| 4 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
| 5 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
| 6 | Hafnia and alumina on sulphur passivated germanium |
| 7 | High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors |
| 8 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
| 9 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
| 10 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
| 11 | Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack |
| 12 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
| 13 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
| 14 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
| 15 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
| 16 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
| 17 | Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device |
| 18 | Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4 |
| 19 | Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition |
| 20 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 21 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
| 22 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 23 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
| 24 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
| 25 | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer |
| 26 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
| 27 | Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures |
| 28 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 29 | Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique |
| 30 | The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process |
| 31 | High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge |
| 32 | High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning |
| 33 | Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma |
| 34 | Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 35 | Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method |
| 36 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 37 | Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors |
| 38 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
| 39 | Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures |
| 40 | A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems |
| 41 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
| 42 | Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma |
| 43 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
| 44 | Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor |
| 45 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
| 46 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
| 47 | Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition |
| 48 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
| 49 | CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm |
| 50 | Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET |
| 51 | Plasma-Modified Atomic Layer Deposition |
| 52 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
| 53 | The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices |
| 54 | Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices |
| 55 | Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors |
| 56 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments |
| 57 | Characteristics of HfO2 thin films grown by plasma atomic layer deposition |
| 58 | Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition |
| 59 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
| 60 | PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases |
| 61 | Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation |
| 62 | Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods |
| 63 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
| 64 | Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition |
| 65 | Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric |
| 66 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
| 67 | Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films |
| 68 | Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension |
| 69 | Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures |
| 70 | Forming-free metal-oxide ReRAM by oxygen ion implantation process |
| 71 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
| 72 | High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness |
| 73 | The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces |
| 74 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
| 75 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
| 76 | Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications |
| 77 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
| 78 | Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition |
| 79 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
| 80 | Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods |
| 81 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
| 82 | Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors |
| 83 | HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method |
| 84 | Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen |
| 85 | Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition |
| 86 | Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure |
| 87 | Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash |
| 88 | Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources |
| 89 | Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition |
| 90 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 91 | Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon |
| 92 | The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures |
| 93 | Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique |
| 94 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
| 95 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
| 96 | On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance |
| 97 | Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer |
| 98 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 99 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
| 100 | HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition |
| 101 | Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene |
| 102 | Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2 |
| 103 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
| 104 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
| 105 | Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates |
| 106 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning |
| 107 | A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance |
| 108 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
| 109 | Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices |
| 110 | Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2 |
| 111 | Dynamic threshold voltage influence on Ge pMOSFET hysteresis |
| 112 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 113 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
| 114 | Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions |
| 115 | Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate |
| 116 | Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements |
| 117 | Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing |
| 118 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 119 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 120 | Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time |
| 121 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
| 122 | Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation |
| 123 | Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection |
| 124 | Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures |
| 125 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 126 | On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR |
| 127 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
| 128 | Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials |
| 129 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
| 130 | Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System |
| 131 | The effects of plasma treatment on the thermal stability of HfO2 thin films |
| 132 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
| 133 | Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V |
| 134 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
| 135 | Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma |
| 136 | Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source |
| 137 | Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics |
| 138 | Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD |
| 139 | Comparison of passivation layers for AlGaN/GaN high electron mobility transistors |
| 140 | Optical properties and bandgap evolution of ALD HfSiOx films |
| 141 | Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers |
| 142 | Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
| 143 | Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films |
| 144 | Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents |
| 145 | Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation |
| 146 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
| 147 | Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN |
| 148 | Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors |
| 149 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
| 150 | Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition |
| 151 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 152 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
| 153 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 154 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 155 | Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition |
| 156 | Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency |
| 157 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
| 158 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
| 159 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 160 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
| 161 | Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma |
| 162 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
| 163 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
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