Publication Information

Title: Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface

Type: Journal

Info: Materials Research Bulletin Volume 87, March 2017, Pages 208-213

Date: 2016-11-28

DOI: https://doi.org/10.1016/j.materresbull.2016.11.040

Author Information

Name

Institution

North Maharashtra University

North Maharashtra University

North Maharashtra University

University of California - Santa Barbara (UCSB)

North Maharashtra University

Films

Deposition Temperature = 300C

75-24-1

7782-44-7

Deposition Temperature = 300C

352535-01-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Dispersion

C-V, Capacitance-Voltage Measurements

Unknown

Hysteresis

C-V, Capacitance-Voltage Measurements

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Substrates

GeON

Keywords

Notes

945

Disclaimer

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