TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorRegionLink
1Pegasus Chemicals🇬🇧Trimethylaluminium
2Yoodatech (Shanghai) Co., LtdTMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3 - contact maggie@yoodatech.com
3Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%
4DOCK/CHEMICALS🇩🇪Trimethylaluminum
5Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al) PURATREM
6Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum packaged for use in deposition systems
7Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
8Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
9Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in high-temp cylinder
10Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum 97%
11Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
12American Elements🇺🇸Trimethylaluminum

www.plasma-ald.com does not endorse any chemical suppliers. These links are provided for the benefit of our users. If a link goes bad, let us know.

If you would like your company's precursor products listed, or your existing listing changed or removed, send me an email.


Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 615 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
2Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
3Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
4Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
5Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
6Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
7Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
8Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
9Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
10Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
11Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
12Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
13Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
14Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
15Flexible, light trapping substrates for organic photovoltaics
16MANOS performance dependence on ALD Al2O3 oxidation source
17Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
18Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
19Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
20GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
21Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
22Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
23Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
24Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
25Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
26Tribological properties of thin films made by atomic layer deposition sliding against silicon
27Protective capping and surface passivation of III-V nanowires by atomic layer deposition
28Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
29Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
30Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
31Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
32Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
33TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
34Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
35Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
3646-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
37Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
38Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
39Nonvolatile Capacitive Crossbar Array for In-Memory Computing
40Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
41Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
42Gate Insulator for High Mobility Oxide TFT
43Dynamic tuning of plasmon resonance in the visible using graphene
44Trapped charge densities in Al2O3-based silicon surface passivation layers
45Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
46Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
47Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
48Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
49Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
50Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
51AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
52High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
53Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth
54Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
55Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
56The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
57Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
58Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
59Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
60Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
61Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
62Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
63Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
64High-efficiency embedded transmission grating
65Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
66Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
67Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
68Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
69Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
70'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
71Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
72Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
73Optimization of the Surface Structure on Black Silicon for Surface Passivation
74Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
75Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
76Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
77Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
78Very high frequency plasma reactant for atomic layer deposition
79Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
80Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
81Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
82Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
83Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
84Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition
85Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
86Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
87Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
88Plasma enhanced atomic layer deposition of aluminum sulfide thin films
89Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
90RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
91Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
92Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
93MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
94Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
95Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
96Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
97Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
98Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
99Band alignment of Al2O3 with (-201) β-Ga2O3
100Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
101Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
102Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
103Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
104Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
105Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
106Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
107Lithium-Iron (III) Fluoride Battery with Double Surface Protection
108Breakdown and Protection of ALD Moisture Barrier Thin Films
109Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
110Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
111Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
112Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
113Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
114Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
115Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
116Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
117Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
118Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
119AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
120Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
121Nitride passivation of the interface between high-k dielectrics and SiGe
122Radical Enhanced Atomic Layer Deposition of Metals and Oxides
123ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
124Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
125Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
126Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
127Symmetrical Al2O3-based passivation layers for p- and n-type silicon
128Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
129Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
130Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
131Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
132Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
133Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
134Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
135Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
136Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
137Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
138Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
139Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
140Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
141Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
142Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
143Advances in the fabrication of graphene transistors on flexible substrates
144Sub-nanometer heating depth of atomic layer annealing
145Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
146Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
147Mechanical properties of thin-film Parylene-metal-Parylene devices
148Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
149Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
150Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
151Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
152Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
1531D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
154Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
155Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
156Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
157Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
158Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
159Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
160Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
161Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
162Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
163Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
164Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
165Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
166AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
167In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
168New materials for memristive switching
169Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
170Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
171Damage evaluation in graphene underlying atomic layer deposition dielectrics
172Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
173Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
174Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
175Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
176Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
177Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
178Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
179Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
180Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
181Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
182Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
183Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
184Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
185Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
186Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
187ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
188Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
189Hafnia and alumina on sulphur passivated germanium
190A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
191Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
192Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
193Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
194Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
195Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
196Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
197Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
198PEALD AlN: controlling growth and film crystallinity
199Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
200Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
201Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
202Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
203The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
204Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
205Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
206Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
207Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors
208AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
209Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
210Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
211Tube-type plasma-enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for the industry with demonstrated cell efficiencies >24%
212Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
213Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
214Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
215Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
216Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
217Capacitance spectroscopy of gate-defined electronic lattices
218Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
219Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
220Method of Fabrication for Encapsulated Polarizing Resonant Gratings
221Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
222Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
223Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
224Residual stress study of thin films deposited by atomic layer deposition
225Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
226Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
227Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
228A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
229Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
230In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
231Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
232Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
233Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
234Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
235Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
236Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
237Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
238Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
239A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
240Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
241High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
242Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
243Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
244Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
245Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
246Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
247The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
248Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
249Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
250Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
251First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
252Silicon surface passivation with atomic layer deposited aluminum nitride
253Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
254Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
255Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
256Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
257Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
258Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
259Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
260Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
261Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
262Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
263Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
264Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
265Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
266Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
267Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
268Low-Power Double-Gate ZnO TFT Active Rectifier
269Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
270Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
271Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
272Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
273Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
274Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
275Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
276Optical in situ monitoring of plasma-enhanced atomic layer deposition process
277Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
278Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
279Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
280On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
281Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
282PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
283Perspectives on future directions in III-N semiconductor research
284Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
285Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
286Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
287Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
288Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
289Properties of AlN grown by plasma enhanced atomic layer deposition
290Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition
291Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
292Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
293Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
294Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
295Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
296Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
297Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
298Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
299Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
300Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
301Composite materials and nanoporous thin layers made by atomic layer deposition
302An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
303Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
304Charge effects of ultrafine FET with nanodot type floating gate
305Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
306Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
307Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
308Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
309Nitride memristors
310Fast Flexible Plastic Substrate ZnO Circuits
311Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
312On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
313Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
314Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
315High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
316Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
317Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
318Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition
319Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
320Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
321On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
322Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
323Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
324Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
325Breakdown and Protection of ALD Moisture Barrier Thin Films
326Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
327On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
328Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor
329High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
330Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
331Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
332Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
333High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
334Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
335Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
336Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
337Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
338The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
339Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
340Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
341Radical Enhanced Atomic Layer Deposition of Metals and Oxides
342Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
343Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
344Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
345Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
346Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
347Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
348Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
349On the equilibrium concentration of boron-oxygen defects in crystalline silicon
350Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
351Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
352Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
353Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
354Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
355Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
356Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
357DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
358Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
359Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
360Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
361Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
362Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
363Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
364Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
365Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
366Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
367Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
368Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
369Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
370Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
371Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
372Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
373On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
374Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
375Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
376Single-Cell Photonic Nanocavity Probes
377GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
378Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
379Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
380Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
381Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
382Fiber-matrix interface reinforcement using Atomic Layer Deposition
383In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
384Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
385Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
386Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
387Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
388The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
389Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
390The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
391Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
392Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
393Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
394Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
395Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
396Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
397Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
398Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
399Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
400Energy-enhanced atomic layer deposition for more process and precursor versatility
401Anti-stiction coating for mechanically tunable photonic crystal devices
402Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
403Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
404High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
405Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
406Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
407Impact of interface materials on side permeation in indirect encapsulation of organic electronics
408XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
409Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
410AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
411Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
412Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
413Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
414Propagation Effects in Carbon Nanoelectronics
415Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
416Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
417Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
418Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
419Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
420Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
421Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
422Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
423Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
424Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
425Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
426Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
427Optical and Electrical Properties of AlxTi1-xO Films
428AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
429Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
430A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
431Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
432Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
433Patterned deposition by plasma enhanced spatial atomic layer deposition
434Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
435Innovative remote plasma source for atomic layer deposition for GaN devices
436Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
437Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
438Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
439Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
440Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
441AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
442Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
443Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
444A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
445Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
446Experimental verification of electro-refractive phase modulation in graphene
447Improved understanding of recombination at the Si/Al2O3 interface
448Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
449Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
450Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
451Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
452Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
453High-Reflective Coatings For Ground and Space Based Applications
454Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
455Study on the characteristics of aluminum thin films prepared by atomic layer deposition
456Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
457A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
458Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
459Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
460Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
461Densification of Thin Aluminum Oxide Films by Thermal Treatments
462Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
463Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
464Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
465Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
466Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
467Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
468Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
469Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
470Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
471Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
472Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
473DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
474Optical display film as flexible and light trapping substrate for organic photovoltaics
475Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
476Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
477High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
478Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
479Atomic layer epitaxy for quantum well nitride-based devices
480Tribological properties of thin films made by atomic layer deposition sliding against silicon
481Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
482Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
483Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
484Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
485Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
486Structural and optical characterization of low-temperature ALD crystalline AlN
487Protective capping and surface passivation of III-V nanowires by atomic layer deposition
488Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
489Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
490A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
491A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
492Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
493AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
494Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
495Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
496Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
497Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
498Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
499Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
500Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
501Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
502Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
503A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
504Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
505Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
506Tuning size and coverage of Pd nanoparticles using atomic layer deposition
507Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
508Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
509Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
510Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
511Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
512AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
513Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
514In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
515Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
516Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
517Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
518Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
519Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
520Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
521Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
522Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy
523Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
524AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
525Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
526Encapsulation method for atom probe tomography analysis of nanoparticles
527Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
528Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
529Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
530Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
531Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
532Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
533Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
534Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
535Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
536Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
537Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
538Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
539TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
540Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
541Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
542Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
543AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
544Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
545Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
546The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
547Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
548Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
549Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
550Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
551Perspectives on future directions in III-N semiconductor research
552Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
553Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
554Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
555Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
556Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
557Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
558Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
559Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
560Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
561Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
562Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
563Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
564Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
565Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
566Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
567Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
568Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
569Passivation effects of atomic-layer-deposited aluminum oxide
570Atomic layer epitaxy for quantum well nitride-based devices
571Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
572Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
573A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
574Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
575Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
576Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
577N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
578Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
579Fast PEALD ZnO Thin-Film Transistor Circuits
580Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
581Atomic layer deposition of metal-oxide thin films on cellulose fibers
582Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
583Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
584Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
585Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
586Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
587Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
588In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
589Crystalline growth of AlN thin films by atomic layer deposition
590823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
591Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
592Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
593Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
594Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
595Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
596A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor