TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylaluminum, min. 98%
2Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
3Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in high-temp 50 ml cylinder for CVD/ALD
4Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al)
5Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
6Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
7EpiValenceAluminium trimethyl
8Sigma-Aldrich, Co. LLCTrimethylaluminum 97%
9American ElementsTrimethylaluminum

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 430 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberCompositionTitle
1AlAtomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
2AlRadical Enhanced Atomic Layer Deposition of Metals and Oxides
3AlStudy on the characteristics of aluminum thin films prepared by atomic layer deposition
4AlTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
5Al:BaTiO3Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
6Al:WO3Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
7Al:ZnOAtomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
8Al:ZnOEncapsulation method for atom probe tomography analysis of nanoparticles
9Al:ZnOMetal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
10Al2O3'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
11Al2O31D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
12Al2O346-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
13Al2O3A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
14Al2O3A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
15Al2O3A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
16Al2O3A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
17Al2O3A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
18Al2O3AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
19Al2O3Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
20Al2O3Advances in the fabrication of graphene transistors on flexible substrates
21Al2O3Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
22Al2O3Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
23Al2O3Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
24Al2O3Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
25Al2O3ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
26Al2O3AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
27Al2O3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
28Al2O3AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
29Al2O3AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
30Al2O3Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
31Al2O3Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
32Al2O3Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
33Al2O3An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
34Al2O3Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
35Al2O3Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
36Al2O3Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
37Al2O3Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
38Al2O3Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
39Al2O3Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
40Al2O3Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
41Al2O3Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
42Al2O3Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
43Al2O3AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
44Al2O3Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
45Al2O3Band alignment of Al2O3 with (-201) β-Ga2O3
46Al2O3Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
47Al2O3Breakdown and Protection of ALD Moisture Barrier Thin Films
48Al2O3Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
49Al2O3Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
50Al2O3Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
51Al2O3Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
52Al2O3Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
53Al2O3Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
54Al2O3Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
55Al2O3Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
56Al2O3Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
57Al2O3Charge effects of ultrafine FET with nanodot type floating gate
58Al2O3Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
59Al2O3Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
60Al2O3Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
61Al2O3Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
62Al2O3Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
63Al2O3Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
64Al2O3Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
65Al2O3Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
66Al2O3Damage evaluation in graphene underlying atomic layer deposition dielectrics
67Al2O3DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
68Al2O3Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
69Al2O3Demonstration of flexible thin film transistors with GaN channels
70Al2O3Densification of Thin Aluminum Oxide Films by Thermal Treatments
71Al2O3Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
72Al2O3Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
73Al2O3DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
74Al2O3Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
75Al2O3Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
76Al2O3Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
77Al2O3Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
78Al2O3Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
79Al2O3Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
80Al2O3Dynamic tuning of plasmon resonance in the visible using graphene
81Al2O3Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
82Al2O3Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
83Al2O3Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
84Al2O3Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
85Al2O3Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
86Al2O3Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
87Al2O3Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
88Al2O3Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
89Al2O3Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
90Al2O3Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
91Al2O3Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
92Al2O3Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
93Al2O3Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
94Al2O3Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
95Al2O3Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
96Al2O3Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
97Al2O3Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
98Al2O3Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
99Al2O3Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
100Al2O3Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
101Al2O3Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
102Al2O3Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
103Al2O3Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
104Al2O3Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
105Al2O3Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
106Al2O3Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
107Al2O3Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
108Al2O3Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
109Al2O3Energy-enhanced atomic layer deposition for more process and precursor versatility
110Al2O3Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
111Al2O3Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
112Al2O3Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
113Al2O3Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
114Al2O3Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
115Al2O3Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
116Al2O3Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
117Al2O3Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
118Al2O3Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
119Al2O3Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
120Al2O3Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
121Al2O3Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
122Al2O3Experimental verification of electro-refractive phase modulation in graphene
123Al2O3Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
124Al2O3Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
125Al2O3Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
126Al2O3Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
127Al2O3Fast Flexible Plastic Substrate ZnO Circuits
128Al2O3Fast PEALD ZnO Thin-Film Transistor Circuits
129Al2O3Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
130Al2O3Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
131Al2O3Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
132Al2O3Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
133Al2O3Flexible, light trapping substrates for organic photovoltaics
134Al2O3Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
135Al2O3Gate Insulator for High Mobility Oxide TFT
136Al2O3Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
137Al2O3Hafnia and alumina on sulphur passivated germanium
138Al2O3High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
139Al2O3High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
140Al2O3High-efficiency embedded transmission grating
141Al2O3High-Reflective Coatings For Ground and Space Based Applications
142Al2O3Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
143Al2O3Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
144Al2O3Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
145Al2O3Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
146Al2O3Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
147Al2O3Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
148Al2O3Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
149Al2O3Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
150Al2O3Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
151Al2O3Improved understanding of recombination at the Si/Al2O3 interface
152Al2O3Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
153Al2O3Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
154Al2O3Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
155Al2O3Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
156Al2O3In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
157Al2O3In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
158Al2O3In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
159Al2O3Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
160Al2O3Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
161Al2O3Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
162Al2O3Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
163Al2O3Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
164Al2O3Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
165Al2O3Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
166Al2O3Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
167Al2O3Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
168Al2O3Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
169Al2O3Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
170Al2O3Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
171Al2O3Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
172Al2O3Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
173Al2O3Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
174Al2O3Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
175Al2O3Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
176Al2O3Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
177Al2O3Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
178Al2O3Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
179Al2O3Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
180Al2O3Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
181Al2O3Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
182Al2O3Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
183Al2O3Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
184Al2O3Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
185Al2O3Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
186Al2O3Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
187Al2O3Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
188Al2O3Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
189Al2O3Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
190Al2O3Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
191Al2O3Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
192Al2O3Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
193Al2O3Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
194Al2O3Low-Power Double-Gate ZnO TFT Active Rectifier
195Al2O3Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
196Al2O3Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
197Al2O3Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
198Al2O3Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
199Al2O3MANOS performance dependence on ALD Al2O3 oxidation source
200Al2O3Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
201Al2O3Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
202Al2O3Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
203Al2O3Method of Fabrication for Encapsulated Polarizing Resonant Gratings
204Al2O3Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
205Al2O3Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
206Al2O3Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
207Al2O3Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
208Al2O3Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
209Al2O3Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
210Al2O3Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
211Al2O3N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
212Al2O3Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
213Al2O3Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
214Al2O3Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
215Al2O3Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
216Al2O3Nitride passivation of the interface between high-k dielectrics and SiGe
217Al2O3Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
218Al2O3Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
219Al2O3Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
220Al2O3On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
221Al2O3On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
222Al2O3On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
223Al2O3Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
224Al2O3Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
225Al2O3Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
226Al2O3Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
227Al2O3Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
228Al2O3Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
229Al2O3Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
230Al2O3Passivation effects of atomic-layer-deposited aluminum oxide
231Al2O3Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
232Al2O3Patterned deposition by plasma enhanced spatial atomic layer deposition
233Al2O3Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
234Al2O3Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
235Al2O3Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
236Al2O3Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
237Al2O3Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
238Al2O3Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
239Al2O3Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
240Al2O3Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
241Al2O3Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
242Al2O3Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
243Al2O3Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
244Al2O3Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
245Al2O3Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
246Al2O3Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
247Al2O3Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
248Al2O3Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
249Al2O3Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
250Al2O3Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
251Al2O3Propagation Effects in Carbon Nanoelectronics
252Al2O3Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
253Al2O3Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
254Al2O3Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
255Al2O3Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
256Al2O3Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
257Al2O3Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
258Al2O3Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
259Al2O3Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
260Al2O3Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
261Al2O3RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
262Al2O3Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
263Al2O3Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
264Al2O3Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
265Al2O3Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
266Al2O3Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
267Al2O3Single-Cell Photonic Nanocavity Probes
268Al2O3Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
269Al2O3Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
270Al2O3Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
271Al2O3Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
272Al2O3Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
273Al2O3Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
274Al2O3Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
275Al2O3Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
276Al2O3Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
277Al2O3Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
278Al2O3Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
279Al2O3Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
280Al2O3Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
281Al2O3Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
282Al2O3Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
283Al2O3Symmetrical Al2O3-based passivation layers for p- and n-type silicon
284Al2O3Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
285Al2O3Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
286Al2O3Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
287Al2O3The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
288Al2O3The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
289Al2O3The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
290Al2O3Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
291Al2O3Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
292Al2O3Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
293Al2O3TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
294Al2O3Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
295Al2O3Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
296Al2O3Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
297Al2O3Trapped charge densities in Al2O3-based silicon surface passivation layers
298Al2O3Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
299Al2O3Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
300Al2O3Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
301Al2O3Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
302Al2O3Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
303Al2O3Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
304Al2O3Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
305Al2O3Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
306Al2O3Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
307Al2O3Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
308Al2O3Very high frequency plasma reactant for atomic layer deposition
309Al2O3Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
310Al2O3Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
311AlxGa1-xNGrowth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
312AlxGa1-xNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
313AlxGa1-xNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
314AlxGa1-xNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
315AlInNAtomic layer epitaxy for quantum well nitride-based devices
316AlInNGrowth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
317AlInNPerspectives on future directions in III-N semiconductor research
318AlMgOExcellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
319AlNA rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
320AlNALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
321AlNAlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
322AlNAlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
323AlNAtomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
324AlNAtomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
325AlNAtomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
326AlNAtomic layer epitaxy for quantum well nitride-based devices
327AlNBipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
328AlNComparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
329AlNComparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
330AlNCompatibility of AlN/SiNx Passivation Technique with High-Temperature Process
331AlNCompatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
332AlNConformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
333AlNCrystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
334AlNCrystalline growth of AlN thin films by atomic layer deposition
335AlNCurrent transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
336AlNEffect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
337AlNElectrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
338AlNEngineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
339AlNEpitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
340AlNFabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
341AlNFabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
342AlNGaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
343AlNGaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
344AlNGate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
345AlNGrowing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
346AlNGrowing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
347AlNGrowth of aluminum nitride films by plasma-enhanced atomic layer deposition
348AlNHigh breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
349AlNHigh performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
350AlNHigh-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
351AlNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
352AlNImpact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
353AlNImpact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
354AlNImproved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
355AlNImproved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
356AlNInfluence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
357AlNInitial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
358AlNInvestigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
359AlNLow-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
360AlNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
361AlNLow-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
362AlNLow-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
363AlNNew materials for memristive switching
364AlNNitride memristors
365AlNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
366AlNOptical properties of AlN thin films grown by plasma enhanced atomic layer deposition
367AlNPassivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
368AlNPEALD AlN: controlling growth and film crystallinity
369AlNPEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
370AlNPerspectives on future directions in III-N semiconductor research
371AlNPlasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
372AlNPlasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
373AlNPlasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
374AlNPlasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
375AlNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
376AlNPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
377AlNPolarization charge properties of low-temperature atomic layer deposition of AlN on GaN
378AlNPractical Challenges of Processing III-Nitride/Graphene/SiC Devices
379AlNProperties of AlN grown by plasma enhanced atomic layer deposition
380AlNRadical Enhanced Atomic Layer Deposition of Metals and Oxides
381AlNSelective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
382AlNSelf-limiting growth of GaN using plasma-enhanced atomic layer deposition
383AlNSelf-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
384AlNSilicon surface passivation with atomic layer deposited aluminum nitride
385AlNStructural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
386AlNStructural and optical characterization of low-temperature ALD crystalline AlN
387AlNStructural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
388AlNSuppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
389AlNSurface passivation of GaAs nanowires by the atomic layer deposition of AlN
390AlNTemplate-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
391AlNThe Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
392AlNThe influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
393AlNThin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
394AlNTiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
395AlNXPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
396AlONImproved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
397AlONImproved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
398AlONImprovement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
399AlONInterface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
400AlONOxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
401AlONPlasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
402AlONStabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
403AlONThin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
404AlPxOyAtomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
405AlSixOyBand offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
406AlSixOyCharacteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
407AlSixOyComposite materials and nanoporous thin layers made by atomic layer deposition
408AlSixOyElectrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
409AlSixOyNanoporous SiO2 thin films made by atomic layer deposition and atomic etching
410AlStTiOEffect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
411AlTixOyAl2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
412AlTixOyCharacteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
413AlTixOyLow-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
414AlTixOyOptical and Electrical Properties of AlxTi1-xO Films
415AlTixOyPlasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
416AlTixOyPlasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
417AlTixOyRutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
418AluconeBreakdown and Protection of ALD Moisture Barrier Thin Films
419Er:Al2O3Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
420HfAlOxA comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
421HfAlOxProperties of HfAlO film deposited by plasma enhanced atomic layer deposition
422HfAlOxTailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
423HfO2The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
424PtAtomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
425PtPlasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
426SiAlNPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
427SiNxChallenges in atomic layer deposition of carbon-containing silicon-based dielectrics
428TiAlNElectrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
429TiAlNTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
430TiCTemperature control for the gate workfunction engineering of TiC film by atomic layer deposition

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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