TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%
2American Elements🇺🇸Trimethylaluminum
3Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
4Pegasus Chemicals🇬🇧Trimethylaluminium
5Yoodatech (Shanghai) Co., LtdTMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3 - contact maggie@yoodatech.com
6Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum 97%
7Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in high-temp cylinder
8Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al) PURATREM
9Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
10Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
11DOCK/CHEMICALS🇩🇪Trimethylaluminum
12Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum packaged for use in deposition systems

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 615 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
2823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
3On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
4Study on the characteristics of aluminum thin films prepared by atomic layer deposition
5Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
6Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
7Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
8Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
9Energy-enhanced atomic layer deposition for more process and precursor versatility
10Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
11On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
12The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
13Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
14Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
15Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
16Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
17Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
18Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
19Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
20Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy
21Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
22A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
23Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
24Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
25High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
26Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
27Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
28Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
29Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
30The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
31AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
32Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors
33Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
34Residual stress study of thin films deposited by atomic layer deposition
35Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition
36Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
37Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
38Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
39Mechanical properties of thin-film Parylene-metal-Parylene devices
40Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
41Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
42Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
43Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
44ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
45Charge effects of ultrafine FET with nanodot type floating gate
46N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
47Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
48Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
49High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
50Symmetrical Al2O3-based passivation layers for p- and n-type silicon
51Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
52Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
53Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
54AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
55Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
56Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
57Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
58Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
59Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
60Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
61Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
62Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
63Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
64Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
65Perspectives on future directions in III-N semiconductor research
66Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
67MANOS performance dependence on ALD Al2O3 oxidation source
68Single-Cell Photonic Nanocavity Probes
69Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
70Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
71Very high frequency plasma reactant for atomic layer deposition
72Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
73Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
74Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
75High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
76Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
77Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
78Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
79Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
80Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
81GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
82Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
83Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
84Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
85Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
86Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
87Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
88Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
89Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
90Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
91Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
92A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
93Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
94Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
95Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
96Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
97Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
98Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
99Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
100A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
101Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
102Fast PEALD ZnO Thin-Film Transistor Circuits
103Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
104Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
105Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
106Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
107Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
108On the equilibrium concentration of boron-oxygen defects in crystalline silicon
109Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
110Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition
111Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
112First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
113Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
114A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
115Tribological properties of thin films made by atomic layer deposition sliding against silicon
116Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
117Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
118Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
119Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
120Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
121Method of Fabrication for Encapsulated Polarizing Resonant Gratings
122Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
123Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
124Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
125Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
126Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
127In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
128Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
129Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
130Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
131Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
132Optical in situ monitoring of plasma-enhanced atomic layer deposition process
133Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
134Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
135The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
136Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
137Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
138Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
139Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
140Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
141Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
142Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
143Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
144The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
145Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
146High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
147Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
148Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
149Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
150Breakdown and Protection of ALD Moisture Barrier Thin Films
151Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
152Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
153Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
154Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
155Lithium-Iron (III) Fluoride Battery with Double Surface Protection
156Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
157Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
158Impact of interface materials on side permeation in indirect encapsulation of organic electronics
159Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
160Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
161Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
162Tube-type plasma-enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for the industry with demonstrated cell efficiencies >24%
163Radical Enhanced Atomic Layer Deposition of Metals and Oxides
164Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
165Nitride passivation of the interface between high-k dielectrics and SiGe
166Structural and optical characterization of low-temperature ALD crystalline AlN
167Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
168Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
169Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
170Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
171AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
172Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
173Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
174Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
175The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
176Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
177Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
178Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
179Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
180Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
181Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
182In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
183Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
184Sub-nanometer heating depth of atomic layer annealing
185Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
186Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
187Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth
188Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
189AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
190Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
191Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
192Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
193TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
194Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
195Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
196Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
197Atomic layer deposition of metal-oxide thin films on cellulose fibers
198Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
199High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
200The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
201Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
202On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
203Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
204Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition
205Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
206Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
207Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
208Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
209Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
210Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
211Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
212Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
213Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
214Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
215Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
216A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
217The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
218Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
219Fast Flexible Plastic Substrate ZnO Circuits
220Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
221Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
222Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
223Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
224Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
225Trapped charge densities in Al2O3-based silicon surface passivation layers
226Atomic layer epitaxy for quantum well nitride-based devices
227Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
228Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
229Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
230Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
231Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
232Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
233Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
234In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
235Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
236Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
237Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
238Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
239Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
240Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
241AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
242Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
243Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
244Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
245Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
246Innovative remote plasma source for atomic layer deposition for GaN devices
247A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
248Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
249Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
250Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
251Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
252Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
253Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
254Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
255Advances in the fabrication of graphene transistors on flexible substrates
256Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
257Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
258Nonvolatile Capacitive Crossbar Array for In-Memory Computing
259In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
260Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
261Patterned deposition by plasma enhanced spatial atomic layer deposition
262Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
263Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
264Perspectives on future directions in III-N semiconductor research
265Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
266XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
267Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
268Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
269Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
270Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
271Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
272Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
273Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
274Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
275Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
276Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
277Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
278Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
279Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
280Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
281Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
282Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
283High-efficiency embedded transmission grating
284High-Reflective Coatings For Ground and Space Based Applications
285Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
286Gate Insulator for High Mobility Oxide TFT
287Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
288AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
289Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
290Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
291Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
292Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
293Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
294Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
295Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
296Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
297Experimental verification of electro-refractive phase modulation in graphene
298Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
299PEALD AlN: controlling growth and film crystallinity
300Nitride memristors
301A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
302Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
303Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
304Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
305Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
306Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
307Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
308Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
309Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
310Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
311Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
312Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
313Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
314Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
315Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
316Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
317Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
318Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
319Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
320Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
321Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
322Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
323Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
324Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
325Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
326Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
327Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
328Protective capping and surface passivation of III-V nanowires by atomic layer deposition
329Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
330Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
331Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
332Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
333'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
334Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
335Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
336Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
337Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
338Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
339Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
340Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
341Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
342Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
343Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
344Damage evaluation in graphene underlying atomic layer deposition dielectrics
345Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
346Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
347Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
348Encapsulation method for atom probe tomography analysis of nanoparticles
349Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
350Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
351Breakdown and Protection of ALD Moisture Barrier Thin Films
352Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
353Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
354Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
355Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
356PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
357Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
358Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
359Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
360Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
361On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
362Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
363Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
364Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
365Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
366Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
36746-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
368Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
369PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
370Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
371Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
372Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
373Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
374Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
375Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
376Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
377Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
378Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
379Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
380Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
381AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
382Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
383Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
384Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
385Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
386Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
387Tribological properties of thin films made by atomic layer deposition sliding against silicon
388Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
389A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
390New materials for memristive switching
391MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
392A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
393Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
394Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
395Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
396High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
397AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
398Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
399Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
400Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
401Optical display film as flexible and light trapping substrate for organic photovoltaics
402Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
403Protective capping and surface passivation of III-V nanowires by atomic layer deposition
404On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
405Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
406Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
407Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
408Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
409Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
410Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
411Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
412Hafnia and alumina on sulphur passivated germanium
413Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
414Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
415Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
416Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
417Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
418Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
419Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
420DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
421Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
422Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
423Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
424Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
425Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
426Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
427Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
428Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
429Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
430Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
431Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
432Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
433Silicon surface passivation with atomic layer deposited aluminum nitride
434Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
435Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
436Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
437Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
438Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
439Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
440Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
441Crystalline growth of AlN thin films by atomic layer deposition
442Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
443AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
444Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
445Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
446Improved understanding of recombination at the Si/Al2O3 interface
447Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
448Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
449Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor
450Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
451Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
452Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
453Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
454Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
455Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
456Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
457Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
458Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
459Capacitance spectroscopy of gate-defined electronic lattices
460Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
461Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
462Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
463Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
464Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
465Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
466Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
467Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
468Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
469Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
470AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
471Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
472Tuning size and coverage of Pd nanoparticles using atomic layer deposition
473Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
474Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
475Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
476Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
477Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
478High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
479Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
480Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
481Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
482Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
483Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
484Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
485Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
486Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
487Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
488Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
489Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
490Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
491Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
492Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
493An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
494Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
495Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
496Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
497Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
498Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
499In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
500Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
501Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
502Flexible, light trapping substrates for organic photovoltaics
503Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
504AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
505Atomic layer epitaxy for quantum well nitride-based devices
5061D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
507Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
508Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
509Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
510Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
511Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
512Plasma enhanced atomic layer deposition of aluminum sulfide thin films
513Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
514Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
515Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
516Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
517Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
518Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
519Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
520Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
521Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
522Densification of Thin Aluminum Oxide Films by Thermal Treatments
523Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
524Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
525Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
526Band alignment of Al2O3 with (-201) β-Ga2O3
527Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
528Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
529Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
530Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
531Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
532Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
533Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
534Propagation Effects in Carbon Nanoelectronics
535Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
536Dynamic tuning of plasmon resonance in the visible using graphene
537Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
538Passivation effects of atomic-layer-deposited aluminum oxide
539Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
540Anti-stiction coating for mechanically tunable photonic crystal devices
541ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
542TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
543Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
544Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
545Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
546Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
547A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
548A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
549Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
550Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
551Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
552Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
553Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
554GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
555Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
556Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
557Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
558Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
559Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
560Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
561Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
562Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
563Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
564Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
565Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
566Optimization of the Surface Structure on Black Silicon for Surface Passivation
567Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
568Properties of AlN grown by plasma enhanced atomic layer deposition
569Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
570Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
571Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
572Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
573DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
574Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
575Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
576Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
577Radical Enhanced Atomic Layer Deposition of Metals and Oxides
578Low-Power Double-Gate ZnO TFT Active Rectifier
579Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
580Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
581Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
582Optical and Electrical Properties of AlxTi1-xO Films
583Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
584Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
585Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
586Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
587Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
588Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
589Fiber-matrix interface reinforcement using Atomic Layer Deposition
590Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
591Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
592Composite materials and nanoporous thin layers made by atomic layer deposition
593Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
594Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
595Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
596RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor