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Publication Information

Title: Trapped charge densities in Al2O3-based silicon surface passivation layers

Type: Journal

Info: Journal of Applied Physics 119, 215306 (2016)

Date: 2016-05-19

DOI: http://dx.doi.org/10.1063/1.4953141

Author Information

Name

Institution

NaMLab gGmbH

NaMLab gGmbH

NaMLab gGmbH

NaMLab gGmbH

Films

Deposition Temperature = 150C

75-24-1

7732-18-5

Deposition Temperature = 150C

352535-01-4

7732-18-5

Deposition Temperature = 150C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Fixed Charge

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Trapped Positive Charge-Density Change

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Minority Carrier Lifetime

MDP, Microwave Detected Photoconductivity

MDPmap, Freiberg Instruments GmbH

Substrates

Si(100)

Keywords

Solar

Passivation

Notes

912

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