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Publication Information

Title: Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications

Type: Journal

Info: Journal of The Electrochemical Society, 157 (10) H930-H933 (2010)

Date: 2010-06-10

DOI: http://dx.doi.org/10.1149/1.3459932

Author Information

Name

Institution

Samsung Electronics Co.

Samsung Electronics Co.

Films

Thermal Al2O3 using Unknown

Deposition Temperature = 200C

75-24-1

7732-18-5

Plasma TiN using Unknown

Deposition Temperature Range = 150-300C

3275-24-9

1333-74-0

7664-41-7

Plasma TiCN using Unknown

Deposition Temperature Range = 150-300C

3275-24-9

1333-74-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Microstructure

XRD, X-Ray Diffraction

Unknown

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Unknown

Work Function

Kelvin Probe (SPV) Surface PhotoVoltage Measurements

Unknown

Work Function

C-V, Capacitance-Voltage Measurements

Unknown

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Unknown

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

Unknown

Effective Oxide Charge, Qeff

C-V, Capacitance-Voltage Measurements

Unknown

Substrates

Al2O3

Keywords

Notes

734

Disclaimer

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