| 1 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 2 | Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays |
| 3 | Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry |
| 4 | Microwave properties of superconducting atomic-layer deposited TiN films |
| 5 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 6 | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| 7 | NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors |
| 8 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
| 9 | Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices |
| 10 | Plasma Enhanced Atomic Layer Deposition on Powders |
| 11 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 12 | ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors |
| 13 | Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation |
| 14 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
| 15 | Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper |
| 16 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
| 17 | Non-destructive acoustic metrology and void detection in 3x50μm TSV |
| 18 | A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance |
| 19 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
| 20 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 21 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 22 | Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System |
| 23 | Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient |
| 24 | Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization |
| 25 | Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si |
| 26 | ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices |
| 27 | A high-density carbon fiber neural recording array technology |
| 28 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
| 29 | Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights |
| 30 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 31 | Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films |
| 32 | Film Uniformity in Atomic Layer Deposition |
| 33 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
| 34 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 35 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
| 36 | TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition |
| 37 | Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells |
| 38 | Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode |
| 39 | Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 40 | Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride |
| 41 | Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition |
| 42 | Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor |
| 43 | Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3 |
| 44 | Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology |
| 45 | Fundamental beam studies of radical enhanced atomic layer deposition of TiN |
| 46 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 47 | Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method |
| 48 | Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation |
| 49 | Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories |
| 50 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 51 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 52 | Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode |
| 53 | DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures |
| 54 | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
| 55 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
| 56 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 57 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 58 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 59 | Fabrication of Highly Ordered and Well-Aligned PbTiO3/TiN Core-Shell Nanotube Arrays |
| 60 | Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films |
| 61 | Plasma-enhanced atomic layer deposition for plasmonic TiN |
| 62 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 63 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 64 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
| 65 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 66 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 67 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
| 68 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
| 69 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
| 70 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 71 | Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View |
| 72 | Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects |
| 73 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 74 | Fully CMOS-compatible titanium nitride nanoantennas |
| 75 | Fabrication and deformation of three-dimensional hollow ceramic nanostructures |
| 76 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
| 77 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 78 | Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors |
| 79 | Nitride memristors |
| 80 | Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device |
| 81 | Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing |
| 82 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 83 | Mechanical characterization of hollow ceramic nanolattices |
| 84 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 85 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 86 | Sub-10-nm ferroelectric Gd-doped HfO2 layers |
| 87 | Understanding and optimizing the floating body retention in FDSOI UTBOX |
| 88 | Texture of atomic layer deposited ruthenium |
| 89 | Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs |
| 90 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 91 | Atomic layer deposition of TiN for the fabrication of nanomechanical resonators |
| 92 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
| 93 | Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma |
| 94 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 95 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
| 96 | Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films |
| 97 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 98 | Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter |
| 99 | Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride |
| 100 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
| 101 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
| 102 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
| 103 | Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance |
| 104 | Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2 |
| 105 | Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks |
| 106 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 107 | ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors |
| 108 | Silicon nanowire networks for multi-stage thermoelectric modules |
| 109 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
| 110 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 111 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
| 112 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
| 113 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 114 | Atomic layer deposition of titanium nitride from TDMAT precursor |
| 115 | Atomic layer deposition of titanium nitride for quantum circuits |
| 116 | Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity |
| 117 | The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology |
| 118 | Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes |
| 119 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
| 120 | Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications |
| 121 | New materials for memristive switching |
| 122 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
| 123 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 124 | Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating |
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