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Publication Information

Title: TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD

Type: Journal

Info: Journal of The Electrochemical Society, 152 (8) G589-G593 (2005)

Date: 2005-01-31

DOI: http://dx.doi.org/10.1149/1.1938108

Author Information

Name

Institution

ASM Microchemistry Oy

ASM Microchemistry Oy

ASM Microchemistry Oy

ASM Microchemistry Oy

Films

Thermal TiN using ASM Pulsar 2000

Deposition Temperature Range = 350-400C

7550-45-0

7664-41-7

Plasma TiN using Unknown

Deposition Temperature Range = 270-370C

7550-45-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

CDE ResMap 168

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Morphology, Roughness, Topography

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Surface Science Instruments ESCA M-Probe

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Link ISIS Spectrometer

Images

SEM, Scanning Electron Microscopy

JEOL 890

Substrates

Silicon

Keywords

Notes

1008

Disclaimer

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