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Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
Type:
Journal
Info:
Materials Letters, Volume 59, Pages 615 - 617
Date:
2004-09-21
Author Information
| Name | Institution |
|---|---|
| Yong Ju Lee | Lawrence Berkeley National Laboratory |
Films
Other TiN
Hardware used: Custom Direct Capacitively Coupled Plasma
CAS#: 3275-24-9
CAS#: 7664-41-7
CAS#: 7440-37-1
Film/Plasma Properties
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Substrates
| SiO2 |
Notes
| 1256 |