Publication Information

Title: 'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition

Type: Journal

Info: Solar Energy Materials and Solar Cells, Volume 143, 2015, Pages 450 - 456

Date: 2015-07-27

DOI: http://dx.doi.org/10.1016/j.solmat.2015.07.040

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

ASM Microchemistry Oy

ECN Solar Energy

ECN Solar Energy

ECN Solar Energy

ECN Solar Energy

Eindhoven University of Technology

Films

Deposition Temperature = 200C

27804-64-4

7782-44-7

Deposition Temperature = 200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Silicon

Keywords

Notes

555

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