Publication Information

Title: Using top graphene layer as sacrificial protection during dielectric atomic layer deposition

Type: Other

Info: arXiv.org > cond-mat > arXiv:1403.3787

Date: 2014-03-15

DOI: http://arxiv.org/abs/1403.3787

Author Information

Name

Institution

Universite catholique de Louvain (UCL)

University of Namur

Universite catholique de Louvain (UCL)

University of Namur

University of Namur

Universite catholique de Louvain (UCL)

Universite catholique de Louvain (UCL)

Universite catholique de Louvain (UCL)

Films

Deposition Temperature = 250C

75-24-1

7782-44-7

Deposition Temperature = 250C

19962-11-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Images

Optical Microscopy

Unknown

Images

SEM, Scanning Electron Microscopy

Unknown

Damage, Defects

Raman Spectroscopy

Horiba Jobin Yvon LabRAM HR800 Raman Spectroscope

Damage, Defects

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Substrates

Graphene

Silicon

Keywords

Graphene

Notes

Ultratech Fiji PEALD Al2O3 and HfO2 deposition on graphene study.

168

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