Publication Information

Title: The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

Type: Journal

Info: The Journal of Chemical Physics 143, 164711 (2015)

Date: 2015-10-13

DOI: http://dx.doi.org/10.1063/1.4934656

Author Information

Name

Institution

University of California - San Diego

Stanford University

University of California - Santa Barbara (UCSB)

Stanford University

University of California - San Diego

University of California - Santa Barbara (UCSB)

Global Foundries

Global Foundries

Texas State University

Stanford University

University of California - San Diego

Films

Deposition Temperature Range = 120-300C

1333-74-0

75-24-1

352535-01-4

7732-18-5

Deposition Temperature Range = 120-300C

1333-74-0

352535-01-4

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interface Trap Density

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Capacitance

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Border Trap Densities, NBT

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Leakage Current

I-V, Current-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Chemical Composition, Impurities

STM, Scanning Tunneling Microscopy

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Omicron Nanotechnology XM 1000 MkII/Sphera system

Substrates

InGaAs

Keywords

Notes

Study of thermal HfO2 ALD following substrate preparation with H2 plasma or H2 plasma plus TMA exposures.

407

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