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Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
Type:
Journal
Info:
J. Vac. Sci. Technol. B, Vol. 24, No. 3, May/Jun 2006
Date:
2006-02-24
Author Information
| Name | Institution |
|---|---|
| Seokhoon Kim | Hanyang University |
| Jinwoo Kim | Hanyang University |
| Jihoon Choi | Hanyang University |
| Hyunseok Kang | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
| Choelhwyi Bae | Samsung Electronics Co. |
Films
Plasma HfO2
Plasma HfO2
Film/Plasma Properties
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Interfacial Layer
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
Notes
| 1199 |