Publication Information

Title: Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures

Type: Journal

Info: Applied Surface Science 312 (2014) 112-116

Date: 2014-05-03

DOI: http://dx.doi.org/10.1016/j.apsusc.2014.05.018

Author Information

Name

Institution

Slovak Academy of Sciences

Films

Thermal HfO2 using Beneq TFS-200

Deposition Temperature = 300C

352535-01-4

7732-18-5

Thermal HfO2 using Beneq TFS-200

Deposition Temperature = 300C

352535-01-4

10028-15-6

Plasma HfO2 using Beneq TFS-200

Deposition Temperature = 300C

352535-01-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

223

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