Publication Information

Title: Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties

Type: Journal

Info: Journal of Vacuum Science & Technology A 30, 01A147 (2012)

Date: 2011-11-11

DOI: http://dx.doi.org/10.1116/1.3665419

Author Information

Name

Institution

Arizona State University

Arizona State University

Arizona State University

Arizona State University

Films

Plasma HfLaOx using Custom ICP

Deposition Temperature Range = 70-250C

352535-01-4

68959-87-5

7782-44-7

Plasma HfO2 using Custom ICP

Deposition Temperature Range = 80-250C

352535-01-4

7782-44-7

Plasma HfO2 using Custom ICP

Deposition Temperature Range = 80-250C

352535-01-4

7782-44-7

7440-59-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

VG Microtech Clam II

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Agilent 5500

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

JEOL JEM 4000EX

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

MSI Electronics Mercury Probe Hg412-3

Breakdown Voltage

I-V, Current-Voltage Measurements

MSI Electronics Mercury Probe Hg412-3

Substrates

Si(100)

Keywords

Notes

655

Disclaimer

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