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Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 032409 (2020)
Date:
2020-03-26
Author Information
| Name | Institution |
|---|---|
| Erika Maeda | Shibaura Institute of Technology |
| Toshihide Nabatame | National Institute for Materials Science (NIMS) |
| Masafumi Hirose | Shibaura Institute of Technology |
| Mari Inoue | National Institute for Materials Science (NIMS) |
| Akihiko Ohi | National Institute for Materials Science (NIMS) |
| Naoki Ikeda | National Institute for Materials Science (NIMS) |
| Hajime Kiyono | Shibaura Institute of Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Substrates
| Si with native oxide |
Notes
| 1486 |