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Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2013 volume 2, issue 11, N222-N227
Date:
2013-08-26
Author Information
| Name | Institution |
|---|---|
| Dina H. Triyoso | Global Foundries |
| Klaus Hempel | Global Foundries |
| S. Ohsiek | Global Foundries |
| V. Jaschke | Global Foundries |
| J. Shu | Global Foundries |
| S. Mutas | Global Foundries |
| K. Dittmar | Global Foundries |
| J. Schaeffer | Global Foundries |
| D. Utess | Global Foundries |
| M. Lenski | Global Foundries |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Stress
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Wet Etch Resistance
Analysis: Custom
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
Notes
| 1380 |