Publication Information

Title: Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 54, No. 3, pp. 1048-1053

Date: 2008-06-16

DOI: http://old.kps.or.kr/jkps/abstract_view.asp?articleuid=F2AC8C97-6957-4BBE-BD9B-3EE9E6A5E4D0

Author Information

Name

Institution

Kunsan National University

IBM

Films

Plasma TiO2 using Custom ICP

Deposition Temperature Range = 175-400C

546-68-9

7782-44-7

Plasma TiO2 using Custom ICP

Deposition Temperature = 350C

546-68-9

7732-18-5

Thermal TiO2 using Custom ICP

Deposition Temperature Range = 200-350C

546-68-9

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Gas Phase Species

OES, Optical Emission Spectroscopy

Unknown

Thickness

Ellipsometry

Unknown

Refractive Index

Ellipsometry

Unknown

Uniformity

Ellipsometry

Unknown

Substrates

Silicon

Keywords

Modeling

Plasma vs Thermal Comparison

Notes

Compared three different ICP sources on the same chamber.

Discusses sample heating from plasma.

711

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