Publication Information

Title: Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films

Type: Journal

Info: ECS Transactions, 58 (10) 289-297 (2013)

Date: 2013-11-01

DOI: http://dx.doi.org/10.1149/05810.0289ecst

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature = 190C

75-24-1

7664-41-7

Deposition Temperature = 190C

75-24-1

7727-37-9

Deposition Temperature = 190C

75-24-1

7727-37-9

1333-74-0

Deposition Temperature Range = 185-215C

1445-79-0

7664-41-7

Deposition Temperature Range = 185-215C

1445-79-0

7727-37-9

Deposition Temperature Range = 185-215C

1445-79-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam VASE

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Morphology, Roughness, Topography

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Substrates

Si(100)

Si(111)

Keywords

Notes

Compares Fiji plasma source with hollow cathode source.

587

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