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Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 45, No. 4, pp. 1069-1073
Date:
2004-06-04
Author Information
| Name | Institution |
|---|---|
| Ju Youn Kim | Hanyang University |
| Keunwoo Lee | Hanyang University |
| Hee Ok Park | Hanyang University |
| Young-Do Kim | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
| Yangdo Kim | Pusan National University |
Films
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Barrier Characteristics
Analysis: Four-point Probe
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Barrier Characteristics
Analysis: SEM, Scanning Electron Microscopy
Substrates
| Si(100) |
Notes
| 1195 |