TaNx Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing TaNx films returned 35 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1ALD TaN Barrier for Enhanced Performance with Low Contact Resistance for 14nm Technology Node Cu Interconnects
2Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
3Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
4Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
5Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
6Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
7Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
8Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
9The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
10Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
11Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
12The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
13Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
14High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
15Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
16Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
17Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
18Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
19Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
20Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
21Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
22Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
23Trilayer Tunnel Selectors for Memristor Memory Cells
24Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
25Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
26Ru thin film grown on TaN by plasma enhanced atomic layer deposition
27The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
28Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
29Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
30Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
31A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
32Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
33Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
34Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
35High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications