Publication Information

Title: Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures

Type: Journal

Info: J. Mater. Chem. C, 2014,2, 2123-2136

Date: 2014-01-07

DOI: http://dx.doi.org/10.1039/C3TC32418D

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature Range N/A

75-24-1

7664-41-7

Deposition Temperature Range N/A

75-24-1

7727-37-9

1333-74-0

Deposition Temperature Range N/A

1445-79-0

7664-41-7

Deposition Temperature Range N/A

1445-79-0

7727-37-9

1333-74-0

Deposition Temperature Range N/A

75-24-1

1445-79-0

7664-41-7

Deposition Temperature Range N/A

75-24-1

1445-79-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Chemical Composition, Impurities

SIMS, Secondary Ion Mass Spectrometry

Physical Electronics Quadrupole SIMS

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Morphology, Roughness, Topography

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Thickness

Ellipsometry

J.A. Woollam VASE

Refractive Index

Ellipsometry

J.A. Woollam VASE

Transmittance

Optical Transmission

Ocean Optics HR4000CG-UV-NIR

Interlayer

TEM, Transmission Electron Microscope

FEI Tecnai G2 F30

Sample Preparation

FIB, Focused Ion Beam

FEI Nova 600i Nanolab

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Park Systems, XE-100

Substrates

Sapphire

Si(100)

Si(111)

Keywords

III-Nitride

Notes

Substrates sequentially ultrasonically cleaned with 2-propanol, acetone, methanol, and deionized water.

Si substrates received HF dip, DI-water rinse, and N2 dry.

Meaglow Ltd hollow cathode RF-plasma source was used.

MicroTorr gas purifiers used.

132

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