Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
Type:
Journal
Info:
Thin Solid Films 694 (2020) 137752
Date:
2019-12-11
Author Information
Name | Institution |
---|---|
Eun-Jin Song | Korea Institute of Materials Science |
Hyunjin Jo | Korea Institute of Materials Science |
Se-Hun Kwon | Pusan National University |
Ji-Hoon Ahn | Hanyang University |
Jung-Dae Kwon | Korea Institute of Materials Science |
Films
Plasma TiON
Plasma TiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: Profilometry
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Flat Band Voltage
Analysis: CV, Cyclic Voltammetry
Characteristic: Interface Trap Density
Analysis: CV, Cyclic Voltammetry
Characteristic: Hysteresis
Analysis: CV, Cyclic Voltammetry
Characteristic: Lifetime
Analysis: MDP, Microwave Detected Photoconductivity
Substrates
Si(100) |
Notes
1532 |