Surface Recombination Velocity Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Surface Recombination Velocity returned 20 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
2Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
3Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
4Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
5Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
6Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
7Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
8Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
9Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
10Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
11Improved understanding of recombination at the Si/Al2O3 interface
12Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
13Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
14Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
15Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
16Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
17Passivation effects of atomic-layer-deposited aluminum oxide
18Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
19Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
20Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD