Transistor Characteristics Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Transistor Characteristics returned 36 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Advances in the fabrication of graphene transistors on flexible substrates
2ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
4Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
5Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
6Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
7Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
8Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
9Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
10DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
11Demonstration of flexible thin film transistors with GaN channels
12Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
13Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
14Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
15Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
16Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
17High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
18Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
19Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
20Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
21Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
22Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
23Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
24Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
25Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
26Nitride passivation of the interface between high-k dielectrics and SiGe
27Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
28Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
29Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
30Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
31Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
32Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
33The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
34Top-down fabricated ZnO nanowire transistors for application in biosensors
35Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
36Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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