Dielectric Constant, Permittivity Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Dielectric Constant, Permittivity returned 87 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
2Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
3Advances in the fabrication of graphene transistors on flexible substrates
4Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
5An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
6Annealing behavior of ferroelectric Si-doped HfO2 thin films
7Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
8Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
9Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
10Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
11Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
12Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
13Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
14Densification of Thin Aluminum Oxide Films by Thermal Treatments
15Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
16Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
17Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
18Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
19Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
20Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
21Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
22Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
23Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
24Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
25Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
26Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
27Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
28Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
29Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
30Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
31Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
32Fast PEALD ZnO Thin-Film Transistor Circuits
33Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
34Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
35Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED
36Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
37Graphene-based MMIC process development and RF passives design
38Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
39Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
40High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
41High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
42Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
43Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
44Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
45Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
46Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
47In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
48In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
49Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
50Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
51Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
52Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
53Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
54Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
55Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
56Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
57Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
58Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
59Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
60Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
61Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
62Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
63Plasma enhanced atomic layer deposition of SiNx:H and SiO2
64Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
65Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
66Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
67Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
68Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
69Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
70Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
71Propagation Effects in Carbon Nanoelectronics
72Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
73Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
74Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
75Remote Plasma ALD of Platinum and Platinum Oxide Films
76Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
77Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
78Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
79Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
80Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
81Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
82TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
83Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
84Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
85TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
86Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
87Very high frequency plasma reactant for atomic layer deposition

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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